Title of article
Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2
Author/Authors
Kaminska، نويسنده , , E. and Piotrowska، نويسنده , , A. and Kossut، نويسنده , , J. and Barcz، نويسنده , , A. and Butkute، نويسنده , , R. and Dobrowolski، نويسنده , , W. and Dynowska، نويسنده , , E. and Jakiela، نويسنده , , R. and Przezdziecka، نويسنده , , E. and Lukasiewicz، نويسنده , , R. and Aleszkiewicz، نويسنده , , M. and Wojnar، نويسنده , , P. and Kowalczyk، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
11
To page
15
Abstract
We report on the fabrication of thin ZnO:N film by thermal oxidation of zinc nitride layers sputter-deposited on quartz, sapphire, GaN, and ZnO surfaces. Through optimising several crucial technological steps we have achieved p-type conductivity with the carrier concentration in mid 1017 cm−3 range and mobility of ∼10 cm2/Vs. Rich photoluminescence spectra have been observed in the region corresponding to the fundamental energy gap region with peaks that can be related to acceptor bound exciton transitions. The transmittance of p-ZnO:N in the whole visible spectrum is ∼80%.
Keywords
A. Semiconductors , D. Electronic transport , D. Optical properties , B. Crystal growth
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1763206
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