Spin susceptibility of two-dimensional hole gases in GaAs/AlGaAs heterostructures

We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8×1010 to 6.5×1010 cm−2. We used the method of spin polarization of carriers in parallel magnetic field. We observed an enhancement of the spin susceptibility over the bulk value that increases as the density is decreased in qualitative agreement with Quantum Monte Carlo calculations. The measured enhancement factor increases from 2.5 to 4.8 as the hole density is decreased.