Title of article :
Tin selenide synthesized by a chemical route: the effect of the annealing conditions in the obtained phase
Author/Authors :
Bernardes-Silva، نويسنده , , Ana Clلudia and Mesquita، نويسنده , , A.F. and de Moura Neto، نويسنده , , E. and Porto، نويسنده , , A.O. and de Lima، نويسنده , , G.M. and Ardisson، نويسنده , , J.D. and Lameiras، نويسنده , , F.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
677
To page :
682
Abstract :
The effects of different annealing conditions over the tin selenide obtained from a chemical route are presented in this work. The tin selenide was annealed at 300 and 600 °C under hydrogen, nitrogen and argon atmospheres. The materials were characterized by X-ray diffraction and 119Sn Mössbauer spectroscopy. In the ‘as synthetized’ material a considerably amount of tin oxide (57%) was detected by Mössbauer spectroscopy. After thermal annealing the amount of these oxides varied according to the temperature and atmosphere used. At 600 °C/hydrogen the smallest amount of tin oxide was obtained (20%). These oxides were formed during the synthetic procedure through the hydrolysis of tin chloride used as reagent.
Keywords :
A. Semiconductor , A. Tin selenide , B. Chemical synthesis , D. Phase transitions , C. X-ray diffraction , C. 119Sn Mِssbauer
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1763268
Link To Document :
بازگشت