Title of article :
Light-induced creation of hydrogen-pairs in a-Si:H
Author/Authors :
Morigaki، نويسنده , , K. and Hikita، نويسنده , , H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
The light-induced creation of hydrogen-pairs in a-Si:H is investigated, using a previous model of the light-induced creation of dangling bonds in a-Si:H. The formation of hydrogen-pairs is reasonably accounted for in comparison with the observation of the doublet in nuclear magnetic resonance spectra in a-Si:H by Su et al. The spin–lattice relaxation time of hydrogen-pairs observed above 7 K by Su et al. is discussed in terms of the presence of a normal dangling bond located near a hydrogen-pair.
Keywords :
A. Disordered system , A. Amorphous semiconductors , D. Recombination and trapping , D. Light-induced phenomena
Journal title :
Solid State Communications
Journal title :
Solid State Communications