Title of article :
Comparative study of lower fullerenes doped with boron and nitrogen
Author/Authors :
Viani، نويسنده , , L. and Santos، نويسنده , , M.C dos Santos، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
498
To page :
501
Abstract :
This work is aimed at comparing the relative stabilities of lower fullerenes Cn (40≤n≤50) doped with boron and nitrogen. Semi-empirical geometry optimizations and ab initio electronic structure calculations on pure and substituted fullerenes are presented. Nitrogen doping substantially decreases the formation enthalpy of all molecular cages when the dopant occupies pentagonal sites. Boron adopts a more planar geometry and is preferentially substituted in hexagonal sites, being less efficient in stabilizing the curved fullerene structures. The electronic structures of C50 isomers substituted by nitrogen and boron are shown to form donor/acceptor pairs for use in molecular rectification.
Keywords :
A. Fullerenes , D. Electronic states
Journal title :
Solid State Communications
Serial Year :
2006
Journal title :
Solid State Communications
Record number :
1763432
Link To Document :
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