• Title of article

    Comparative study of lower fullerenes doped with boron and nitrogen

  • Author/Authors

    Viani، نويسنده , , L. and Santos، نويسنده , , M.C dos Santos، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    498
  • To page
    501
  • Abstract
    This work is aimed at comparing the relative stabilities of lower fullerenes Cn (40≤n≤50) doped with boron and nitrogen. Semi-empirical geometry optimizations and ab initio electronic structure calculations on pure and substituted fullerenes are presented. Nitrogen doping substantially decreases the formation enthalpy of all molecular cages when the dopant occupies pentagonal sites. Boron adopts a more planar geometry and is preferentially substituted in hexagonal sites, being less efficient in stabilizing the curved fullerene structures. The electronic structures of C50 isomers substituted by nitrogen and boron are shown to form donor/acceptor pairs for use in molecular rectification.
  • Keywords
    A. Fullerenes , D. Electronic states
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1763432