• Title of article

    High temperature properties of manganese modified CaBi4Ti4O15 ferroelectric ceramics

  • Author/Authors

    Zhang، نويسنده , , Shujun and Kim، نويسنده , , Namchul and Shrout، نويسنده , , Thomas R. and Kimura، نويسنده , , Masahiko and Ando، نويسنده , , Akira، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    154
  • To page
    158
  • Abstract
    The dielectric, piezoelectric and electromechanical properties of manganese modified CaBi4Ti4O15 (CBT) bismuth layer-structured ferroelectric ceramics were determined in the range of room temperature to ∼800 ∘C. The room temperature dielectric permittivity and dielectric loss were found to be 148 and 0.2%, respectively. The piezoelectric coefficients, d 33 and d 15 , were 14  pC/N and 9  pC/N, with electromechanical coupling factors k 33 ′ = 8.4 % and k 15 = 5.5 % . The mechanical quality factor Q (sliver extensional mode) was 4300 at room temperature, decreasing with increasing temperature. The remnant polarization and coercive field were found to be 5.2 μC/cm2 and 88 kV/cm, respectively. The excellent piezoelectric, mechanical properties, together with its high Curie temperature (∼800 ∘C) and high electrical resistivity ( 1 × 10 7 Ω cm at 500 ∘C), demonstrated the potential of manganese modified CBT ceramics for ultra-high temperature sensing applications.
  • Keywords
    A. Ferroelectrics , D. Piezoelectricity
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1763502