Title of article
Pressure dependence of and of a dirty two-gap superconductor, carbon-doped MgB2
Author/Authors
Huang، نويسنده , , Xiaosheng and Mickelson، نويسنده , , W. and Regan، نويسنده , , B.C. and Kim، نويسنده , , Steve and Zettl، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
163
To page
166
Abstract
We have measured T c and H c 2 ( T ) of carbon-doped MgB2 under hydrostatic pressures up to 15.6 kbar. d T c / d P is determined to be −0.20 K/kbar and H c 2 ( T = 0 ) decreases with pressure at a rate that is consistent with the theoretical value for pure MgB2, d H c 2 / d P = − 0.036 T/kbar . By analyzing our results within the theoretical framework of a dirty two-gap supersonductor, we determine values for the interband coupling and the ratio between the diffusivities associated with the two bands at three different pressures. We also extract the diffusivities and coherence lengths associated with each band. Finally, we estimate the pressure dependence of the charge carrier concentration in the σ band to be d ln n / d P = − 0.013 / kbar .
Keywords
D. Upper critical field , A. MgB2 , E. High pressure
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1763507
Link To Document