• Title of article

    Enhancement of field emission of SnO2 nanowires film by exposure of hydrogen gas

  • Author/Authors

    Jang، نويسنده , , Hoon-Sik and Kang، نويسنده , , Sung-Oong and Kim، نويسنده , , Yong-Il، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    495
  • To page
    499
  • Abstract
    The effect of hydrogen (H2) gas exposure on the field emission properties of tin oxide (SnO2) nanowires films synthesized by the carbon thermal reduction vapor transport method was investigated. The exposure of H2 gas results in the reduction of the turn-on voltage for driving a current of 10 nA from 7.6 V/μm to 5.5 V/μm and the increase of the field current based on 10 V/μm from 0.47 μA to 2.1 μA. The Fowler–Nordheim plot obtained from the current–voltage data supports that the field emission enhancement of SNW film is attributed to the reduction of the work function by the H2 exposure.
  • Keywords
    C. Field emission , A. Tin oxide , B. Nanowires
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1763623