Title of article
High pressure behaviour of GaCMn3
Author/Authors
Meenakshi، نويسنده , , S. and Vijayakumar، نويسنده , , V. and Lausi، نويسنده , , A. and Busetto، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
500
To page
502
Abstract
Results of X-ray powder diffraction measurements up to 35 GPa carried out on GaCMn3 are presented. GaCMn3 does not undergo any structural transition in this pressure region. However, the pressure–volume data can be fitted to two straight line segments in the pressure regions; one from 0 to 5 GPa and another from 5 to 30 GPa respectively.
Keywords
A. GaCMn3 , D. High pressure , C. ADXRD , B. Diamond anvil cell
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1763625
Link To Document