Title of article :
Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD
Author/Authors :
Yang، نويسنده , , Xuelin and Wu، نويسنده , , Jiejun and Chen، نويسنده , , Zhitao and Pan، نويسنده , , Yaobo and Zhang، نويسنده , , Yan and Yang، نويسنده , , Zhijian and Yu، نويسنده , , Tongjun and Zhang، نويسنده , , Guoyi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
236
To page :
239
Abstract :
In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grown by MOCVD have been investigated. A new vibrational mode at 577 cm−1 obtained is assigned to the local vibrational mode (LVM) of Mn substituting the Ga site. Another mode at 667 cm−1 arises from vibrational mode of nitrogen vacancies-related defects. It is found that Mn doping increases the lattice disorder and other built-in defects such as the nitrogen vacancies. The room temperature ferromagnetism is not only dependent on the substitutional Mn content but also strongly related to these lattice disorder and negative defects in (Ga, Mn)N films.
Keywords :
C. Defects , A. Diluted magnetic semiconductor , C. Raman scattering , B. Metalorganic chemical vapor deposition
Journal title :
Solid State Communications
Serial Year :
2007
Journal title :
Solid State Communications
Record number :
1763749
Link To Document :
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