Author/Authors :
Lee، نويسنده , , Yueh-Chien and Hu، نويسنده , , Sheng-Yao and Water، نويسنده , , Walter and Huang، نويسنده , , Ying-Sheng and Yang، نويسنده , , Min-De and Shen، نويسنده , , Ji-Lin and Tiong، نويسنده , , Kwong-Kau and Huang، نويسنده , , Chia-Chih، نويسنده ,
Abstract :
The influence of rapid thermal annealing (RTA) on the optical and structural properties of ZnO thin films grown on Si substrate has been investigated by X-ray diffraction (XRD), photoluminescence (PL), and Raman scattering (RS) measurements. The relaxation of the residual stress by increasing the annealing temperature during the RTA process was observed by the measured shift of (002) XRD diffraction peak towards 34.40∘ and the shift of RS E 2 (high) mode closer to 437 cm−1. The process also resulted in a reduction of the measured full-width at half maximum (FWHM) of the PL emission line and that of the asymmetrical broadening of RS E 2 (high) mode. The observed changes have demonstrated that RTA is a viable technique for improving the crystalline quality of ZnO/Si films.
