Influence of magnetic clusters on electrical and magnetic properties of In1−xMnxSb/GaAs dilute magnetic semiconductor grown by liquid phase epitaxy

In1−xMnxSb films have been grown with different Mn doping concentrations ( x = 0.0085 , 0.018, 0.029 and 0.04) beyond the equilibrium solubility limit by liquid phase epitaxy. We have studied temperature dependent resistivity, the Hall effect, magnetoresistance and magnetization for all compositions. Saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic clusters in the film which has been verified by scanning electron microscopy studies. The anomalous Hall coefficient is found to be negative. Remnant field present on the surface of the clusters seems to affect the anomalous Hall effect at very low fields (below 350 Gauss). In the zero field resistivity, a variable-range hopping conduction mechanism dominates below 3.5 K for all samples above which activated behavior is predominant. The temperature dependence of the magnetization measurement shows a magnetic ordering below 10 K which is consistent with electrical measurements.