Exciton states in wurtzite InGaN/GaN quantum wells: Strong built-in electric field and interface optical-phonon effects

Considering the strong built-in electric field (BEF) effects and large exciton–phonon interactions, we investigate the exciton states confined in an InGaN/GaN single quantum well (QW) by using the Lee–Low–Pines variational method. We find that the exciton state modification caused by the exciton–phonon interactions is remarkable. The exciton energy shift due to exciton–phonon interactions increases monotonically if the well width increases. With increasing the In fraction, the exciton energy shift firstly increases to a maximum, then decreases. The BEF has a significant influence on the exciton states in a QW with large well width. The physical reasons have been analyzed in detail. Good agreement for the zero-phonon peak energies and the Huang–Rhys factor has been obtained between our numerical results and the corresponding experimental measurements.