Title of article :
Electron irradiation induced defects in undoped and Te doped gallium phosphide
Author/Authors :
Vassiliki and Zardas، نويسنده , , G.E. and Symeonides، نويسنده , , Ch.I. and Euthymiou، نويسنده , , P.C. and Papaioannou، نويسنده , , G.J. and Yannakopoulos، نويسنده , , P.H. and Vesely، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
The aim of the present work is to investigate defects that are introduced to Gallium Phosphide (GaP) by electron irradiation as well as their dependence on the background doping. Undoped and Te doped n-type GaP have been irradiated with 1.5 MeV electrons at fluences of 5×1016 e/cm2. Deep level transient spectroscopy assessment revealed the dependence of the trap characteristics on background doping.
Keywords :
A. Semiconductors , D. Photoconductivity , D. Recombination and trapping , E. Photoelectron spectroscopy
Journal title :
Solid State Communications
Journal title :
Solid State Communications
