The effects of the writing voltage on the electrical bistability properties of organic memory devices consisting of a single layer

Electrical bistability properties of organic memory devices consisting of a single layer were theoretically investigated by using a drift-diffusion model combined with a field dependent mobility model and a single level trap model. After application of a writing voltage, the current under a reading voltage was larger than that without a writing voltage. The behavior in the current bistability was affected from the trapped electron density near the metal/organic interface. The increasing rate of the trapped electron density by increasing a writing voltage was relatively small, but it causes the abrupt increment to the current density, resulting in the bistable characteristics in the model device.