Title of article :
Antiferroelectric phase transition in SbSI and SbSeI crystals
Author/Authors :
Audzijonis، نويسنده , , Algirdas and Sereika، نويسنده , , Raimundas and ?altauskas، نويسنده , , Raimundas، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
2
From page :
88
To page :
89
Abstract :
This work represents existence of the high temperature antiferroelectric phase transitions in SbSI, SbSeI and BiSeI crystals. The antiferrolectric phase transition is found by a measured capacitance change at a frequency of 1 kHz for the SbSI and SbSeI crystals grown by the Bridgman–Stockbarger technique in the temperature range of 270–440 K. Therefore, SbSI has three phases: ferroelectric ( T < 295 K ), antiferroelectric ( 295 < T < 410 K ) and paraelectric ( T > 410 K ). SbSeI has two phases: antiferroelectric ( T < 410 K ) and paraelectric ( T > 410 K ). The antiferroelectric phase transition is of an intermediate type between displacive and order–disorder types.
Keywords :
A. Ferroelectrics , C. Phase transitions , E. Capacitance
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764316
Link To Document :
بازگشت