Author/Authors :
Kwon، نويسنده , , Y.H. and Kang، نويسنده , , T.W. and Shon، نويسنده , , Y. and Cho، نويسنده , , H.Y. and Jeon، نويسنده , , H.C. and Park، نويسنده , , Y.S. and LEE، نويسنده , , D.U. and Kim، نويسنده , , T.W. and Fu، نويسنده , , D.J. and Fan، نويسنده , , X.J.، نويسنده ,
Abstract :
Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1−xGex)1−yMny with a high ferromagnetic transition temperature ( T c ) . The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1−xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn + -implanted and annealed Si1−xGex thin films, and the magnetization curves as functions of the temperature showed that the T c value was above 300 K. These results indicate that the formed (Si1−xGex)1−yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.
