Title of article :
Double tunneling in polarization switching
Author/Authors :
Gordon ، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
4
From page :
201
To page :
204
Abstract :
We present a theory of quantum switching of polarization in hydrogen-bonded order–disorder ferroelectrics, and examine the macroscopic quantum-tunneling rate of the polarization reversal for nano-samples induced by microscopic tunneling of protons between the two wells in potentials of hydrogen bonds. We compute the rate of the electric polarization tunneling through the barrier between two minima of the free energy density of a system. By using the instanton approach, we calculate a barrier factor and a prefactor multiplying the exponential of the action integral for the tunneling splitting at zero applied electric field. We compute the tunneling rate of domain walls. We obtain the double tunneling effect, i.e., the polarization tunneling related to the proton tunneling between the two minima in potentials of hydrogen bonds.
Keywords :
A. Hydrogen-bonded ferroelectrics , D. Polarization tunneling , D. Proton tunneling , D. Memory effect
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764344
Link To Document :
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