The effect of the bias on the electron transport properties in a magnetic double-barrier nanostructure

In this paper, the effect of the bias on the electron transport is in detail studied in a magnetic double-barrier nanostructure. The large spin-polarization can be achieved in such a device, and the degree of the spin-polarization is strongly dependent on the applied bias. We also found that the transmission probability periodically changes with the increase of the separation L between the two adjacent magnetic fields. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter.