Title of article :
The influence of localized states charging on tunneling current noise spectrum
Author/Authors :
V.N. Mantsevich، نويسنده , , V.N. and Maslova، نويسنده , , N.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
6
From page :
278
To page :
283
Abstract :
We report the results of theoretical investigations of low frequency tunneling current noise spectra component ( 1 / f α ). Localized states of individual impurity atoms play a key role in low frequency tunneling current noise formation. It is found that switching “on” and “off” of Coulomb interaction of conduction electrons with one or two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum 1 / f α . Power law exponent in different low frequency ranges depends on the relative values of Coulomb interaction of conduction electrons with different charged impurities.
Keywords :
D. Many-particle interaction , D. Non-equilibrium effects , D. Tunneling nanostructures
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764373
Link To Document :
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