Author/Authors :
Levichev، نويسنده , , S. and Basa، نويسنده , , P. and Horvلth، نويسنده , , Zs.J. and Chahboun، نويسنده , , A. and Rolo، نويسنده , , A.G. and Barradas، نويسنده , , N.P. and Alves، نويسنده , , E. and Gomes، نويسنده , , M.J.M.، نويسنده ,
Abstract :
CdSe nanocrystals (NCs) embedded in a solid SiO2 matrix were fabricated by RF-sputtering technique. Raman and photoluminescence spectroscopy illustrated the NCs size dependent confinement effect. The CdSe NCs charging effects were electrically characterized by means of capacitance–voltage measurements. A memory effect was demonstrated through memory window measurements.
Keywords :
D. Recombination and trapping , A. Semiconductors , B. Magnetron sputtering , D. Memory effect
