Title of article :
Giant magnetoresistance in semiconducting DyNiBi
Author/Authors :
Casper، نويسنده , , Frederick and Felser، نويسنده , , Claudia، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal–insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.
Keywords :
A. Half-Heusler compounds , A. Semiconductors , C. Impurities in semiconductors , D. Giant magnetoresistance
Journal title :
Solid State Communications
Journal title :
Solid State Communications