Title of article
Giant magnetoresistance in semiconducting DyNiBi
Author/Authors
Casper، نويسنده , , Frederick and Felser، نويسنده , , Claudia، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
175
To page
177
Abstract
The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal–insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.
Keywords
A. Half-Heusler compounds , A. Semiconductors , C. Impurities in semiconductors , D. Giant magnetoresistance
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764532
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