Title of article :
Kondo resonance in an AC driven quantum dot subjected to finite bias
Author/Authors :
Goker، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
We employ the time-dependent non-crossing approximation to study the time-averaged conductance for a single electron transistor in the Kondo regime when the dot level is sinusoidally driven from its equilibrium position by means of a gate voltage in finite bias. We find that the average conductance exhibits significant deviation from the monotonic reduction when the applied bias is equal to the driving frequency of the dot level. We investigate the effect of the temperature and the driving frequency on the observed enhancement. We attribute this behaviour to the overlap of the satellite Kondo peaks with the split Kondo resonances formed at each lead’s Fermi level. We display the spectral function to put our interpretation onto more rigorous footing.
Keywords :
D. Tunneling , A. Quantum dots
Journal title :
Solid State Communications
Journal title :
Solid State Communications