Title of article
Preparation and properties of Mn-doped GaN powders
Author/Authors
Wei، نويسنده , , Yanyan and Guo، نويسنده , , Junmei and Hou، نويسنده , , Denglu and Qiao، نويسنده , , Shuang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
234
To page
236
Abstract
GaMnN powders with varying Mn concentrations (0–7 at. %) were prepared by the Sol-Gel method. All samples are found to have a hexagonal wurtzite structure without any secondary phases. Photoluminescence spectra show a redshift in the peak position of the UV PL with increasing Mn doping which is consistent with the band gap narrowing. X-ray photoelectron spectroscopy (XPS) measurements show that the doped Mn ion in (Ga, Mn)N powders is in the divalent state. Magnetism measurements revealed that all samples are paramagnetic at 5 K and that the Curie–Weiss temperature is negative.
Keywords
E. Luminescence , D. Optical properties , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764558
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