Author/Authors :
Kim، نويسنده , , C.R. and Lee، نويسنده , , J.Y. and Shin، نويسنده , , C.M. and Leem، نويسنده , , J.Y. and Ryu، نويسنده , , H. and Chang، نويسنده , , J.H and Lee، نويسنده , , H.C. and Son، نويسنده , , C.S. and Lee، نويسنده , , W.J. and Jung، نويسنده , , W.G. and Tan، نويسنده , , S.T. and Zhao، نويسنده , , J.L. and Sun، نويسنده , , X.W.، نويسنده ,
Abstract :
ZnO thin film was deposited on Si substrate with the insertion of ZnO buffer layer, which was annealed at various temperatures between 600 and 900 ∘C. ZnO thin film was grown by Atomic layer deposition (ALD) technique and the ZnO/ZnO-buffer/Si films have been further annealed for 30 min in N2 ambient. High quality ZnO thin films were obtained on the annealed ZnO-buffer/Si layer. In particular, the ZnO thin film that is grown on 750 ∘C-annealed ZnO buffer exhibits a smoother surface, and enhanced near-band-edge emission compared to those grown on the as-prepared ZnO buffer layer. In the meantime, ZnO with 900 ∘C-annealed ZnO buffer layer shows the narrowest and strongest (002) peak from the XRD measurement.
