Structure and electrical properties of trilayered BaTiO3/(Na0.5Bi0.5)TiO3–BaTiO3/BaTiO3 thin films deposited on Si substrate

Highly (110)-oriented trilayered BaTiO3 (25 nm) /(Na0.5Bi0.5)0.94Ba0.06TiO3 (300 nm) / BaTiO3 (25 nm) thin films were deposited on Pt/Ti/SiO2/Si substrates via chemical solution deposition. It was found that the inserted bottom BaTiO3 layer between Pt and (Na0.5Bi0.5)0.94Ba0.06TiO3 is very effective for promoting the crystallinity and (110)-oriented growth of NBT-BT films. Meanwhile, the BaTiO3 layers also provide better interfaces between the ferroelectric thin film and the electrodes in terms of reducing leakage current. The trilayered films showed enhanced dielectric and ferroelectric properties compared with the pure NBT-BT films. Well saturated hysteresis loops were obtained due to good electrical insulating properties in the high electric field region.