Title of article :
Mn doping concentration dependent p–d hybridization in
Author/Authors :
Wang، نويسنده , , Dan and Zhang، نويسنده , , Xinyi and Wang، نويسنده , , Jie and Koide، نويسنده , , Tsuneharu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
The 3d electronic states of transition-metal Mn dopants in Ga 1 − x Mn x N have been investigated by Mn L -edge X-ray absorption spectroscopy (XAS) measurements. Through the XAS analysis, the valence of the Mn ions is determined. With the increase of doping concentration, the integrated intensities of L 2 , 3 vary not monotonously, but increase first and then decrease. The relationship between the Mn doping concentration and the degree of p–d hybridization is discussed.
Keywords :
D. p–d hybridization , E. X-ray absorption , A. Ga 1 ? x Mn x N
Journal title :
Solid State Communications
Journal title :
Solid State Communications
