Structural and optical characterization of Si-implanted Al0.18Ga0.82N

Both structural and optical activation studies of Si-implanted Al0.18Ga0.82N have been made as a function of anneal temperature by using the x-ray rocking curve measurements and photoluminescence (PL) and time-resolved PL (TRPL) measurements. The full width at half maximum values of both (002) and (102) direction ω -rocking curves for the Si-implanted Al0.18Ga0.82N samples decrease as the anneal temperature increases from 1150 to 1250 ∘C. The peak widths of the rocking curves for the as-implanted sample are much broader than those for the Si-implanted and annealed samples, indicating the implantation damage recovery after high temperature anneal. With increasing anneal temperature, the PL peak intensity increases and the PL decay becomes slower. The increase of PL intensity and recombination rate is attributed to both an increase of Si-donor activation and lattice damage recovery. These PL and x-ray results are very consistent with the results of anneal temperature-dependent electrical activation study.