Title of article :
The conversion of wettability in transparent conducting Al-doped ZnO thin film
Author/Authors :
Cho، نويسنده , , Yong Chan and Cha، نويسنده , , Suyoung and Shin، نويسنده , , Jong Moon and Park، نويسنده , , Jeong Hun and Park، نويسنده , , Sang Eon and Cho، نويسنده , , Chae Ryong and Park، نويسنده , , Sungkyun and Pak، نويسنده , , Hyuk K. and Jeong، نويسنده , , Se-Young and Lim، نويسنده , , Ae-Ran، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
3
From page :
609
To page :
611
Abstract :
We report on the systematic changes of surface wettability in one of the most promising transparent conducting oxide materials, Al-doped ZnO (AZO) thin films. It was revealed that the characteristic surface wettability, which would make a key role in adhesion with other layers of optoelectronic device, can be largely changed by Al concentrations and film growth temperature. Keeping the electrical conductivity constant, the water contact angle (WCA) of a 2 mol% AZO film was changed by about 50 ∘C depending on the surface roughness. In the samples grown at 300 ∘C, the roughness enhancement was large and a hydrophobic surface formed, whereas in the samples grown at 500 ∘C a hydrophilic surface formed. We attributed the variation in surface wettability with growth temperature to changes in surface morphology. This result suggests that 2 mol% Al doping concentration can be considered as a critical concentration in changing of surface morphology of AZO as well as in electrical properties.
Keywords :
D. Water contact angle , D. Conductivity , D. Wettability , A. Transparent conductive oxides
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1765050
Link To Document :
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