Electric force microscope study of InP:Mn for nonvolatile memory application

InP:Mn layers were prepared by the Mn implantation to single crystal InP. InP:Mn layers showed the ferroelectric hysteresis loop with the remanent polarization of about 12.2 μC/cm2. Local domain switching of InP:Mn was performed by electric force microscope, in which the high domain wall motions were well fitted to Merz’s law. We could estimate the low activation fields to be about 0.21 MV/cm with μ = 1.02 . We suggest that a metastable state in ferroelectric state of InP:Mn enable us to switch domains faster than general ferroelectric materials such as PbTiO3.