Title of article :
Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots
Author/Authors :
Kim، نويسنده , , Y.G. and Baek، نويسنده , , K.S. and Chang، نويسنده , , S.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski–Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.
Keywords :
D. Quantum localization , B. Nanofabrication , A. Nanostructures , E. Luminescence
Journal title :
Solid State Communications
Journal title :
Solid State Communications