Author/Authors :
Zhang، نويسنده , , Z. and Zhang، نويسنده , , R. and Xie، نويسنده , , Z.L and Liu، نويسنده , , B. and Li، نويسنده , , M. and Fu، نويسنده , , D.Y. and Fang، نويسنده , , H.N. and Xiu، نويسنده , , X.Q. and Lu، نويسنده , , H. and Zheng، نويسنده , , Y.D. and CHEN، نويسنده , , Y.H. and Tang، نويسنده , , C.G. and Wang، نويسنده , , Z.G.، نويسنده ,
Abstract :
A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics.
Keywords :
A. Surface charge accumulation layer , D. Spin-dependent current , A. InN , D. Spin splitting
