Title of article :
Debye temperature and melting point of ternary chalcopyrite semiconductors
Author/Authors :
Kumar، نويسنده , , V. and Shrivastava، نويسنده , , A.K. and Banerji، نويسنده , , Rajib and Dhirhe، نويسنده , , D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
Debye temperature ( θ D ) and melting point ( T m ) of AIBIIIC2V I and AIIBIVC2V chalcopyrite semiconductors have been discussed. Four simple relations have been proposed to calculate the values of θ D . Two are based on plasmon energy data and one each on T m and molecular weight ( W ). We have also proposed two simple relations to calculate T m of these semiconductors. One is based on plasmon energy and the other on W. The calculated values of θ D and T m from all equations are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.
Keywords :
D. Debye temperature , D. Melting temperature , A. Tetrahedral semiconductors , A. Ternary chalcopyrite semiconductors
Journal title :
Solid State Communications
Journal title :
Solid State Communications