Author/Authors :
Yang، نويسنده , , J.H. and Cheng، نويسنده , , Y. and Liu، نويسنده , , Y. and Ding، نويسنده , , X. and Wang، نويسنده , , Y.X. and Zhang، نويسنده , , Y.J. and Liu، نويسنده , , H.L.، نويسنده ,
Abstract :
Co-doped ZnO diluted magnetic semiconductor films were prepared on Si(100) substrates by magnetron sputtering system and the Co content varies from 0.01 to 0.15. The X-ray diffraction results showed ZnO of the wurtzite structure. The ferromagnetism was observed at room temperature. The X-ray near-edge absorption spectroscopy revealed that Co substitutes for Zn2+ ions in the valence of +2 state in the Co-doped ZnO films.
Keywords :
C. Multi-layer , C. XANES , D. RTFM , B. Magnetron sputtering
