Title of article :
Czochralski growth and characterization of the piezoelectric single crystal La3Ga5.5Nb0.5O14
Author/Authors :
Yu، نويسنده , , F.P. and Yuan، نويسنده , , D.R. and Yin، نويسنده , , X. and Zhang، نويسنده , , S.J. and Pan، نويسنده , , L.H. and Guo، نويسنده , , S.Y. and Duan، نويسنده , , X.L. and Zhao، نويسنده , , X.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
1278
To page :
1281
Abstract :
La3Ga5.5Nb0.5O14 crystals are promising materials for bulk acoustic wave and surface acoustic wave applications. In this work, the starting materials for high quality La3Ga5.5Nb0.5O14 single crystal growth were investigated. Adding extra Ga2O3 of 1.0–1.5 wt% to the starting materials was found to be beneficial for high quality crystal growth. High quality La3Ga5.5Nb0.5O14 crystals were grown by the conventional Czochralski method along the X - and Z -axes. Complete sets of dielectric constants, piezoelectric coefficients and elastic constants of La3Ga5.5Nb0.5O14 crystals grown along the X - and Z -axes were determined by a resonance technique and impedance analysis at room temperature, respectively. The relevant constants were obtained and discussed. The obtained results for La3Ga5.5Nb0.5O14 are: ε 11 T = 19.07 , ε 33 T = 79.06 , d 11 = − 7.00 pC/N , d 14 = 5.60 pC/N ; s11E=9.60 pm2/N; s12E=−4.65 pm2/N; s13E=−2.05 pm2/N; s14E=−3.60 pm2/N; s33E=5.77 pm2/N; s44E=23.60 pm2/N and s66E=28.50 pm2/N, respectively.
Keywords :
D. Piezoelectricity , D. Dielectric response , B. Crystal growth
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1765443
Link To Document :
بازگشت