Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate

In this paper, the formation of a p–n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c -axis oriented. The formation of p–n ZnO homojunction is verified by current–voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.