Author/Authors :
Wang، نويسنده , , D. and Zhang، نويسنده , , X.Y. and Wang، نويسنده , , J. and Wei، نويسنده , , S.Q. and Yan، نويسنده , , W.S. and Boukhvalov، نويسنده , , D.W.، نويسنده ,
Abstract :
The local structure of Mn atoms in Ga1−xMnxN has been investigated by the Mn L3 edge x-ray absorption spectrum (XAS) at total electron yield mode, which preferentially looks at atoms near the surface. A modeling defects configuration, Mn5 micro-clusters complexed with substitutional MnGa and interstitial MnI is found for a higher Mn doping concentration. This new configuration is also confirmed by the total energy calculations.
