In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten/gallium nanoprobes

A lithography-free technique for measuring the electrical properties of n-type GaN nanowires has been investigated using nanoprobes mounted in a scanning electron microscope (SEM). Schottky contacts were made to the nanowires using tungsten nanoprobes, while gallium droplets placed in situ at the end of tungsten nanoprobes were found to be capable of providing Ohmic contacts to GaN nanowires. Schottky nanodiodes were fabricated based on single n-type nanowires, and measured current–voltage ( I – V ) results suggest that the Schottky nanodiodes deviate from ideal diodes mainly due to their nanoscopic contact area. Additionally, the effect of the SEM electron beam on the I – V characteristics was investigated and was found to impact the transport properties of the Schottky nanodiodes, possibly due to an increase in carrier density in the nanodiodes.