Title of article
Influence of carbon, nitrogen and oxygen impurities on the ductility and electronic properties of fcc iridium: First-principles study
Author/Authors
Bannikov، نويسنده , , V.V. and Shein، نويسنده , , I.R. and Ivanovskii، نويسنده , , A.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
1807
To page
1809
Abstract
Unusual changes in mechanical and electronic properties of fcc Ir in the presence of light sp elements (carbon, nitrogen and oxygen) as interstitial impurities have been predicted. By means of the ab initio calculations we found that, in contrast to the majority of other d metals, the ductility of iridium increases in the presence of the above impurities simultaneously with its “metallization” — owing to appreciable growth of the near-Fermi density of states.
Keywords
A. Light sp impurities , Electronic properties , A. Iridium , E. Ab initio calculations , D. Elastic
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1766007
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