Title of article :
Role of Coulomb interactions in semicore levels Ga d levels of GaX semiconductors: Implication on band offsets
Author/Authors :
Cherian، نويسنده , , William R. and Mahadevan، نويسنده , , P. B. Persson، نويسنده , , C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
The positions of the semicore Ga d levels in GaX semiconductors (X=N,P, and As) are underestimated in density functional calculations using either the local density approximation LDA or the generalized gradient approximation GGA for the exchange functional. Correcting for this inaccuracy within LDA+U calculations with an on-site Coulumb interaction U on the semicore d-states results in a modest enhancement of the band gap. We show that this modest enhancement of the band-gap energy comes from the movement of the valence-band maximum alone, thus not affecting the conduction-band states. Further, the localization of the charge on Ga d states with U leads to a regulation of charge on Ga. This yields a shift of 1–2 eV of the core levels on the Ga atom while the anion core levels remain unchanged.
Keywords :
D. Electronic band structure , A. Semiconductors
Journal title :
Solid State Communications
Journal title :
Solid State Communications