Ab initio study on magnetism at GaN (100) and (101) surfaces

The magnetism of GaN (100) and (101) surfaces containing neutral intrinsic defects has been investigated using ab inito calculations. Ideal Ga-ended GaN (100) surfaces and (101) surfaces are nonmagnetic. After surface relaxation, an N-ended GaN (100) surface transforms to a Ga-end, which presents local magnetic moments being ferromagnetically coupled. Neutral gallium vacancies at the (100) surface bring about large magnetic moments, which are ferromagnetically coupled. The spin-polarization of 2p electrons of nitrogen atoms is responsible for the induced magnetic moments. Neutral nitrogen vacancies at the (101) surface induce a zero magnetic moment. Neutral gallium vacancies at the (101) surface might lead to an antiferromagnetic state.