Title of article
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
Author/Authors
Zhou، نويسنده , , Bi and Pan، نويسنده , , S.W. and Chen، نويسنده , , Rui and Chen، نويسنده , , S.Y. and Li، نويسنده , , Cheng and Lai، نويسنده , , H.K. and Yu، نويسنده , , J.Z. and Zhu، نويسنده , , X.F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
1897
To page
1901
Abstract
SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to ∼2×1011 cm−2 have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. The samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. Finally, a model is proposed to explain the role of strain during the anodization of SiGe/Si multiple layers.
Keywords
A. Strain-induced , D. Heterogeneous nanostructures , B. Electrochemical anodization , C. Silicon germanium
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1766054
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