Title of article :
Structure and magnetic properties of films
Author/Authors :
Gao، نويسنده , , Weixia and Hou، نويسنده , , Denglu and Hu، نويسنده , , Yuchan and Wei، نويسنده , , Shiqiang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
1924
To page :
1927
Abstract :
A series of FexGe1−x ( x = 0 , 0.0097, 0.019, 0.038, 0.056, 0.073, 0.089, 0.105) thin films were prepared by magnetron sputtering. Physical property measurement system (PPMS) measurements showed that such films have ferromagnetic properties at room temperature and that the ferromagnetism arises from the interaction of the Fe spins, mediated by hole carriers. From the studies of X-ray diffraction (XRD) we find no secondary phases in the films. X-ray photoelectron spectrum (XPS) and X-ray absorption fine structure (XAFS) indicate that the Fe ions are in the 0 and the +2 state.
Keywords :
A. Semiconductor , C. Structural properties , D. Room-temperature ferromagnetism
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1766067
Link To Document :
بازگشت