Title of article
Pseudo-relaxor behaviour induced by Maxwell–Wagner relaxation
Author/Authors
Wang، نويسنده , , C.C. and Dou، نويسنده , , S.X.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
2017
To page
2020
Abstract
We performed a further investigation on the Maxwell–Wagner (MW) relaxation-induced relaxor-like dielectric response characterized by a broad peak in the real part of the dielectric permittivity as a function of temperature. Based on the double-layer MW model formulated by Catalan et al. (2000) [10], an empirical formula was derived to describe the temperature dependence of the peak intensity. It was also found that the temperature dependence of the peak position can be characterized by an Arrhenius-like relation. The differences between the true relaxor and MW-related relaxor behaviours are also discussed.
Keywords
A: Semiconductors , D: Dielectric response
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1766114
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