Title of article :
Pseudo-relaxor behaviour induced by Maxwell–Wagner relaxation
Author/Authors :
Wang، نويسنده , , C.C. and Dou، نويسنده , , S.X.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
2017
To page :
2020
Abstract :
We performed a further investigation on the Maxwell–Wagner (MW) relaxation-induced relaxor-like dielectric response characterized by a broad peak in the real part of the dielectric permittivity as a function of temperature. Based on the double-layer MW model formulated by Catalan et al. (2000) [10], an empirical formula was derived to describe the temperature dependence of the peak intensity. It was also found that the temperature dependence of the peak position can be characterized by an Arrhenius-like relation. The differences between the true relaxor and MW-related relaxor behaviours are also discussed.
Keywords :
A: Semiconductors , D: Dielectric response
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1766114
Link To Document :
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