• Title of article

    Pseudo-relaxor behaviour induced by Maxwell–Wagner relaxation

  • Author/Authors

    Wang، نويسنده , , C.C. and Dou، نويسنده , , S.X.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    4
  • From page
    2017
  • To page
    2020
  • Abstract
    We performed a further investigation on the Maxwell–Wagner (MW) relaxation-induced relaxor-like dielectric response characterized by a broad peak in the real part of the dielectric permittivity as a function of temperature. Based on the double-layer MW model formulated by Catalan et al. (2000) [10], an empirical formula was derived to describe the temperature dependence of the peak intensity. It was also found that the temperature dependence of the peak position can be characterized by an Arrhenius-like relation. The differences between the true relaxor and MW-related relaxor behaviours are also discussed.
  • Keywords
    A: Semiconductors , D: Dielectric response
  • Journal title
    Solid State Communications
  • Serial Year
    2009
  • Journal title
    Solid State Communications
  • Record number

    1766114