Title of article :
Stress evolution and lattice distortion induced by thickness variation and lattice misfit in films
Author/Authors :
Chen، نويسنده , , C.Z. and Cai، نويسنده , , C.B. and Liu، نويسنده , , Z.Y and Peng، نويسنده , , L. and Gao، نويسنده , , B. J. Fan، نويسنده , , F. and Lu، نويسنده , , Y.M. and Zeng، نويسنده , , R. and Guo، نويسنده , , Z.P. and Li، نويسنده , , W.X. and Dou، نويسنده , , S.X.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
66
To page :
69
Abstract :
La0.67Sr0.33MnO3−δ thin films with different thicknesses are prepared in order to investigate the structural variation induced by film thickness and lattice misfit. The X-ray diffraction results show the in-built stress evolution from a full strained thin layer (∼10 nm) to a completely relaxed thick layer (∼150 nm), which can be well explained by the Poisson effect. Raman spectroscopy measurements reveal the complicated correlation between the Jahn–Teller (JT) distortion and film thickness. Important octahedron modes reflecting JT distortion are completely caused by the relaxed layer. It is observed that broad JT bands are formed in the films with large thickness of the relaxed layer and the residual stress in the layer leads to an obvious blue shift. In contrast, for films with the thin relaxed layer, JT modes are present as a sharper structure and move to low frequency, indicating towards a much better oxygen stoichiometry.
Keywords :
A. LSMO , D. Stress effect , E. Raman spectrum
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1766278
Link To Document :
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