Title of article :
Gate-controlled electron–electron interactions in an quantum well structure
Author/Authors :
Zhou، نويسنده , , Y.M. and Gao، نويسنده , , K.H. and Yu، نويسنده , , G. and Zhou، نويسنده , , W.Z. and Lin، نويسنده , , T. and Guo، نويسنده , , S.L. and Chu، نويسنده , , J.H. and Dai، نويسنده , , N.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
3
From page :
251
To page :
253
Abstract :
We study the parabolic negative magnetoresistivity in a gated In0.53Ga0.47As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron–electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler’s theory.
Keywords :
D. Magnetoresistivity , D. Two-dimensional electron gas , D. Electron–electron interactions , A. Quantum well
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1766381
Link To Document :
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