Title of article
Gate-controlled electron–electron interactions in an quantum well structure
Author/Authors
Zhou، نويسنده , , Y.M. and Gao، نويسنده , , K.H. and Yu، نويسنده , , G. and Zhou، نويسنده , , W.Z. and Lin، نويسنده , , T. and Guo، نويسنده , , S.L. and Chu، نويسنده , , J.H. and Dai، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
251
To page
253
Abstract
We study the parabolic negative magnetoresistivity in a gated In0.53Ga0.47As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron–electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler’s theory.
Keywords
D. Magnetoresistivity , D. Two-dimensional electron gas , D. Electron–electron interactions , A. Quantum well
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1766381
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