Title of article :
Ab initio studies on the electronic structure of
Author/Authors :
Jeong، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
337
To page :
340
Abstract :
We investigated the electronic properties of CeIrSi 3 using density functional theory. The electronic structure of CeIrSi3 was calculated with the spin–orbit interactions and the on-site Coulomb potential for the Ce-derived 4f orbitals. The Ce 4f bands are located near the Fermi level. The fully relativistic band structure scheme shows that the spin–orbit coupling splits the 4f states into two manifolds. It was found that the total number of DOS at the Fermi level by the fully relativistic scheme corresponds to the large electronic specific heat coefficient γ b = 9.88 mJ/K 2 mol and underestimates the experiment value by a factor of 12.1.
Keywords :
D. Electronic structures , A. CeIrSi 3
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1766429
Link To Document :
بازگشت