Author/Authors :
Lee، نويسنده , , K.H. and Lee، نويسنده , , J.Y. and Kwon، نويسنده , , Y.H. and Ryu، نويسنده , , S.Y. and Kang، نويسنده , , T.W. and Jung، نويسنده , , H.Y. and Park، نويسنده , , S.H. Tony Lee، نويسنده , , D.U. and Kim، نويسنده , , T.W.، نويسنده ,
Abstract :
An X-ray diffraction pattern (XRD) showed that GaN nanorods grown on Si(111) substrates were preferentially oriented along the [0001] direction. The transmission electron microscopy (TEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of { 1 ̄ 100 } and { 1 ̄ 102 } planes. The disordered nuclei of the GaN nanorods produced a two-dimensional thin-film layer near the GaN/Si(111) interfacial region. The relation between the microstructural properties and the geometry factors of the tip region for GaN nanorods formed on Si(111) substrates is described on the basis of the XRD and TEM results.
Keywords :
A. Disordered system , A. Nanostructures , A. Surface and interfaces , C. Scanning and transmission electron microscopy
