Title of article :
First principles study on the electronic structure and effect of vanadium doping of BN nanowires
Author/Authors :
He، نويسنده , , K.H. and Zheng، نويسنده , , G. and Kirtman، نويسنده , , B. and Chen، نويسنده , , Q.L. and Wang، نويسنده , , X.C. and Timَn، نويسنده , , V. and Ji، نويسنده , , G.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
The electronic structure and effect of vanadium doping of BN nanowires are studied by first principles calculations. For the pure nanowires, it can be found that B atoms move inwards whereas N atoms move outwards, and BN nanowires have a constant band gap about 4.08 eV with larger diameter. The above-mentioned features are in agreement with those of BN nanotubes. We also find that the pure nanowires become more and more stable with increasing diameter. For V-doped BN nanowires, the V atoms move outwards, and the total energies of pair V-doped BN nanowires indicate that the ferromagnetic ground state, and the electronic structures show half-metallicity. The majority of total spin magnetic moments originate from V atoms, and B atoms which near dopant have a little contribution, while N atoms provide a little reverse magnetic moment. This study may be useful in spintronics and nanomagnets.
Keywords :
D. Electronic structure , D. Effect of doping , A. BN nanowires , B. First principles
Journal title :
Solid State Communications
Journal title :
Solid State Communications