Author/Authors :
Garcia، نويسنده , , Jorge M. and He، نويسنده , , Rui and Jiang، نويسنده , , Mason P. and Yan، نويسنده , , Jun and Pinczuk، نويسنده , , Aron and Zuev، نويسنده , , Yuri M. and Kim، نويسنده , , Keun Soo and Kim، نويسنده , , Philip R. Baldwin، نويسنده , , Kirk and West، نويسنده , , Ken W. and Pfeiffer، نويسنده , , Loren N.، نويسنده ,
Abstract :
Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800–900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e -beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.
